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Through-focus EUV multilayer defect compensation considering optical proximity correction.

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    This study introduces a novel defect compensation method to improve extreme ultraviolet (EUV) lithography imaging quality. The technique optimizes mask patterns to mitigate defects and optical proximity effects, enhancing through-focus performance.

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    Area of Science:

    • Semiconductor Manufacturing
    • Lithography Technology
    • Optical Engineering

    Background:

    • Extreme ultraviolet (EUV) multilayer defects degrade through-focus imaging quality.
    • Optical proximity effects further diminish imaging performance in EUV lithography.
    • Mask pattern modification offers a potential solution to mitigate these issues.

    Purpose of the Study:

    • To propose a heuristic-based defect compensation method for EUV lithography.
    • To optimize mask patterns considering both optical proximity correction and through-focus imaging.
    • To enhance the manufacturability and efficiency of defect compensation.

    Main Methods:

    • Utilizing covariance matrix adaptation evolution strategy (CMA-ES) for mask pattern and sub-resolution assist feature (SRAF) optimization.
    • Developing new encoding strategies for mask edge pixels and SRAFs to ensure manufacturability and efficiency.
    • Employing a rigorous database approach with scattering matrices for efficient mask diffraction spectrum simulation.

    Main Results:

    • The proposed method effectively compensates for imaging quality degradation caused by bump and pit defects.
    • Simulations demonstrate significant improvement in through-focus imaging quality for defective masks.
    • Optimized mask patterns mitigate both defect impacts and optical proximity effects.

    Conclusions:

    • The heuristic-based defect compensation method successfully improves EUV lithography imaging quality.
    • The developed encoding strategies balance manufacturability and optimization efficiency.
    • This approach offers a viable solution for enhancing EUV lithography process robustness.