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Source and mask optimizing with a defocus antagonism for process window enhancement.

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    This study introduces a new method, DGASMO, to improve photolithography by directly optimizing depth of focus (DOF). The technique enhances process windows and robustness for integrated circuit manufacturing.

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    Area of Science:

    • Semiconductor manufacturing
    • Photolithography technology
    • Integrated circuit design

    Background:

    • Critical dimension (CD) reduction in integrated circuits necessitates advanced lithography techniques.
    • Depth of focus (DOF) is crucial for photolithography robustness, but direct optimization remains challenging.
    • Inverse lithography technology (ILT) enhances resolution and process window (PW), including DOF and exposure latitude (EL).

    Purpose of the Study:

    • To propose a novel source and mask optimization (SMO) method, DGASMO, for directly controlling and improving DOF in photolithography.
    • To enhance the process window (PW) and robustness of lithographical processes through advanced optimization.
    • To address the lack of clear scenarios for direct DOF optimization in ILT.

    Main Methods:

    • Developed a defocus generative and adversarial method (DGASMO) for source, mask, and defocus optimization.
    • Utilized an inverse imaging framework with the Adam algorithm for accelerated optimization.
    • Incorporated a penalty term to push defocus outward and pattern fidelity to pull it inward during optimization.

    Main Results:

    • DGASMO significantly increased PW and DOF compared to SMO-Adam at 85nm and 55nm technology nodes.
    • Maximal increases in PW (15% EL) reached 29.12% and DOF 44.09% at 85nm.
    • Maximal increases in PW (2% EL) reached 190.2% and DOF 118.42% at 55nm.

    Conclusions:

    • The proposed DGASMO approach demonstrates superiority in improving DOF and process window.
    • DGASMO enhances the overall robustness of photolithographical processes.
    • This method offers a direct pathway to optimize DOF, crucial for advanced semiconductor manufacturing.