Evaporated nanometer chalcogenide films for scalable high-performance complementary electronics.

Area of Science:

• Materials Science
• Electronics Engineering
• Semiconductor Physics

Background:

• The electronics industry seeks stable, high-mobility semiconductors for large-area, cost-effective manufacturing.
• Current semiconductor candidates face challenges like expensive materials, low stability, and limited large-area growth.

Purpose of the Study:

• To report wafer-scale ultrathin metal chalcogenide semiconductors for high-performance complementary electronics.
• To demonstrate a cost-effective and scalable method for producing advanced electronic devices.

Main Methods:

• Utilized standard room temperature thermal evaporation for wafer-scale deposition.
• Employed mild post-annealing for in-situ phase conversion of n-type bismuth sulfide.
• Fabricated complementary inverters using n-type bismuth sulfide and p-channel tellurium devices.

Main Results:

• Achieved n-type bismuth sulfide thin-film transistors with mobilities >10 cm² V⁻¹ s⁻¹, on/off ratios >10⁸, and high stability.
• Demonstrated p-channel tellurium devices with hole mobilities >50 cm² V⁻¹ s⁻¹.
• Constructed complementary inverters exhibiting a high gain of 200 and remarkable voltage transfer characteristics.

Conclusions:

• Established a foundation for simple, cost-effective, and scalable deposition of electronics.
• The developed semiconductors are compatible with monolithic integration with commercial products like organic light-emitting diodes (OLEDs).
• This work paves the way for next-generation, large-area, and integrated electronic systems.