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Multiple Resistive Switching Mechanisms in Graphene Oxide-Based Resistive Memory Devices
Sergei Koveshnikov1, Oleg Kononenko1, Oleg Soltanovich1
1Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka 142432, Russia.
Nanomaterials (Basel, Switzerland)
|October 27, 2022
Summary
Graphene oxide exhibits reliable resistive switching through metallic filaments, contact modification, and bulk changes. This study confirms all three mechanisms operate simultaneously in Al/GO/n-Si structures, offering new insights into electronic device functionality.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Graphene oxide (GO) is a key material for resistive switching applications.
- Existing models for GO resistive switching include filamentary conduction, contact resistance modification, and bulk oxidation/reduction.
- The simultaneous operation of these mechanisms in GO remains under investigation.
Purpose of the Study:
- To investigate the operative mechanisms of resistive switching in graphene oxide.
- To determine if multiple switching mechanisms can occur simultaneously in Al/GO/n-Si structures.
- To elucidate the role of the aluminum/graphene oxide interface and local properties of conductive channels.
Main Methods:
- Fabrication of Al/GO/n-Si structures.
- Electron beam-induced current (EBIC) imaging to detect conduction channels.
- Raman spectroscopy to analyze changes in graphene oxide bulk properties.
- Capacitance-voltage (C-V) measurements to probe interface effects.
Main Results:
- Demonstrated simultaneous operation of metallic filamentary conduction, contact resistance modification, and bulk oxidation/reduction in GO resistive switching.
- EBIC revealed multiple point-like conduction channels and large areas of increased conductivity.
- Raman spectroscopy and C-V measurements provided evidence for interface involvement and changes in GO bulk resistivity.
- Identified unique local properties of conductive channels, including charge state changes and work function modification.
Conclusions:
- All three proposed mechanisms contribute to resistive switching in graphene oxide.
- The Al/GO interface plays a significant role in the switching process.
- Understanding these mechanisms is crucial for developing advanced electronic devices based on graphene oxide.
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