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Robustly Stable Ferroelectric Polarization States Enable Long-Term Nonvolatile Storage against Radiation in

Siwei Dai1,2, Qijun Yang3, Binjian Zeng3

  • 1School of Advanced Materials and Nanotechnology, Xidian University, Xi'an710126, China.

ACS Applied Materials & Interfaces
|November 1, 2022
PubMed

Keywords:
HfO2-based ferroelectric thin filmferroelectric field-effect transistorpolarization statesprogrammed/erased statestotal ionizing dose effect

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