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Published on: May 13, 2020
Revealing Resistive Switching Mechanism in CaFeOx Perovskite System with Electroforming-Free and Reset
Hung-Yang Lo1, Chun-Wei Huang2, Chun-Chien Chiu3
1Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, No.1001, University Rd., East Dist., Hsinchu City, 30010, Taiwan (R.O.C.).
Abstract:
Recently, perovskite (PV) oxides with ABO3 structures have attracted considerable interest from scientists owing to their functionality. In this study, CaFeOx is introduced to reveal the resistive switching properties and mechanism of oxygen vacancy transition in PV and brownmillerite (BM) structures. BM-CaFeO2.5 is grown on an Nb-STO conductive substrate epitaxially. CaFeOx exhibits excellent endurance and reliability. In addition, the CaFeOx also demonstrates an electroforming-free characteristic and multilevel resistance properties. To construct the switching mechanism, high-resolution transmission electron microscopy is used to observe the topotactic phase change in CaFeOx . In addition, scanning TEM and electron energy loss spectroscopy show the structural evolution and valence state variation of CaFeOx after the switching behavior. This study not only reveals the switching mechanism of CaFeOx , but also provides a PV oxide option for the dielectric material in resistive random-access memory (RRAM) devices.
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