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Updated: Aug 22, 2025

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
Published on: May 23, 2018
PBEsol/HSE functional: a promising candidate for vanadium dioxide (B) characterization.
Elaheh Mohebbi1, Eleonora Pavoni1, Davide Mencarelli2
1Department of Materials, Environmental Sciences and Urban Planning, Marche Polytechnic University Ancona 60131 Italy e.mohebbi@staff.univpm.it e.pavoni@staff.univpm.it p.stipa@staff.univpm.it e.laudadio@staff.univpm.it.
Density functional theory (DFT) calculations reveal the dynamic instability and electronic properties of VO2(B). This study highlights VO2(B) nanostructures for optoelectronics, particularly IR photodetectors and smart windows.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Computational Chemistry
Background:
- Vanadium dioxide (VO2) exhibits various polymorphs with unique electronic and optical properties.
- Understanding the structural and electronic characteristics of VO2(B) is crucial for its application in smart materials.
- Previous studies may have limitations in accurately predicting the band gap and dynamic stability of VO2(B).
Purpose of the Study:
- To comprehensively investigate the structural, electronic, optical, and vibrational properties of the VO2(B) polymorph using DFT.
- To evaluate the suitability of different DFT functionals for accurately modeling VO2(B).
- To explore the potential applications of VO2(B) nanostructures in optoelectronics.
Main Methods:
- Density Functional Theory (DFT) calculations were employed.
- Generalized Gradient Approximation (GGA)/PBEsol and hybrid HSE functionals were utilized for electronic structure calculations.
- Phonon band structure, Raman spectra, cohesive energy, and optical properties were computed.
Main Results:
- Eight computed Raman modes were assigned to the VO2(B) structure, matching experimental data.
- Phonon dispersion curves revealed negative frequencies, indicating dynamic instability of VO2(B).
- The PBEsol functional predicted a band gap of 0.26 eV, while HSE yielded 0.67 eV, with optical conductivity in the infrared region.
Conclusions:
- The combination of GGA/PBEsol and HSE functionals is recommended for accurate prediction of VO2(B) properties.
- VO2(B) nanostructures show promise for infrared (IR) photodetectors and smart windows due to their semiconductor and optical characteristics.
- VO2(B) is a versatile material with potential for continued advancements in electronics and optoelectronics.
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