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Updated: Aug 22, 2025

Developing High Performance GaP/Si Heterojunction Solar Cells
Published on: November 16, 2018
A type-II NGyne/GaSe heterostructure with high carrier mobility and tunable electronic properties for photovoltaic
Liru Zeng1, Siyu Zhang1, Linwei Yao1
1School of Information Science and Technology, Northwest University, Xi'an, 710127, People's Republic of China.
Abstract:
The two-dimensional heterostructures with type-II band alignment and super-high carrier mobility offer an updated perspective for photovoltaic devices. Here, based on the first-principles calculation, a novel vertical NGyne/GaSe heterostructure with an intrinsic type-II band alignment, super-high carrier mobility (104cm2V-1s-1), and strong visible to ultraviolet light absorption (104-105cm-1) is constructed. We investigate the electronic structure and the interfacial properties of the NGyne/GaSe heterostructure under electric field and strain. The band offsets and band gap of the NGyne/GaSe heterostructure can be regulated under applied vertical electric field and strain efficiently. Further study reveals that the photoelectric conversion efficiency of the NGyne/GaSe heterostructure is vastly improved under a negative electric field and reaches up to 25.09%. Meanwhile, near-free electron states are induced under a large applied electric field, leading to the NGyne/GaSe heterostructure transform from semiconductors to metal. Our results indicate that the NGyne/GaSe heterostructure will have extremely potential in optoelectronic devices, especially solar cells.
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