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Enhanced Resistive Switching and Synaptic Characteristics of ALD Deposited AlN-Based RRAM by Positive Soft Breakdown

Seyeong Yang1, Jongmin Park1, Youngboo Cho1

  • 1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea.

International Journal of Molecular Sciences
|November 11, 2022
PubMed

Keywords:
RRAMaluminum nitrideconduction mechanismsynaptic devices

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