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Updated: Aug 22, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Resistive Switching Characteristics of Alloyed AlSiOx Insulator for Neuromorphic Devices

Yunseok Lee1, Jiung Jang1, Beomki Jeon1

  • 1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Korea.

Materials (Basel, Switzerland)
|November 11, 2022
PubMed

Keywords:
alloyed materialsmemristorneuromorphic systemresistive switching

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