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Electrical Performance of 28 nm-Node Varying Channel-Width nMOSFETs under DPN Process Treatments

Shou-Yen Chao1, Wen-How Lan2, Shou-Kong Fan3

  • 1Department of Electronic Engineering, Minghsin University of Science and Technology, Hsinchu 30401, Taiwan.

Micromachines
|November 11, 2022
PubMed

Keywords:
channel widthhigh-knMOSFETnitridationsubthreshold swingthreshold voltage

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