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Published on: May 13, 2020
Conduction Mechanism Analysis of Abrupt- and Gradual-Switching InGaZnO Memristors
Woo Sik Choi1, Min Suk Song2, Hyungjin Kim2
1School of Electrical Engineering, Kookmin University, Seoul 02707, Korea.
Abstract:
In this work, two types of InGaZnO (IGZO) memristors were fabricated to confirm the conduction mechanism and degradation characteristics of memristors with different electrode materials. The IGZO memristor exhibits abrupt switching characteristics with the Pd electrode owing to the formation and destruction of conductive filaments but shows gradual switching characteristics with the p-type Si electrode according to the amount of generated oxygen vacancy. The electrical characteristics and conduction mechanisms of the device are analyzed using an energy band diagram and experimentally verified with random telegraph noise characteristics confirming the trap effects on the device conduction.
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