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Method for Keyhole-Free High-Aspect-Ratio Trench Refill by LPCVD.

Henk-Willem Veltkamp1, Yves L Janssens1, Meint J de Boer1

  • 1MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands.

Micromachines
|November 11, 2022
PubMed
Summary

Keyholes in micro-electromechanical systems (MEMS) trenches hinder device performance. This study presents a method using a modified Bosch process to etch positively-tapered trenches, preventing keyhole formation for improved MEMS device reliability.

Keywords:
high-aspect-ratio trencheskeyhole-free refilling by LPCVDtrench isolation/insulation

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Area of Science:

  • Materials Science
  • Mechanical Engineering
  • Electrical Engineering

Background:

  • Micro-electromechanical systems (MEMS) utilize micro-machined structures, including high-aspect-ratio trenches, for various applications.
  • Keyholes, or voids, frequently form within these trenches during fabrication, negatively impacting device functionality and reliability.

Purpose of the Study:

  • To explain the mechanisms of keyhole formation in MEMS trenches.
  • To present a novel method for etching positively-tapered high-aspect ratio trenches to prevent keyhole formation.
  • To optimize trench sidewall profiles for void-free refilling.

Main Methods:

  • A two-step Bosch-based plasma etching process was employed.
  • Key process parameters including cycle time, platen power, and process pressure were systematically varied.
  • Scallop dimensions and sidewall profile angles were analyzed to understand their correlation with trench taper.

Main Results:

  • The study demonstrates a direct relationship between the etch step's cycle time and the resulting scallop height and sidewall profile angle.
  • Lowering the etch step time was found to effectively control the chemical flux, leading to the desired positive trench taper.
  • Achieved a positive sidewall taper of 88° to 89°, crucial for preventing keyholes after subsequent low-pressure chemical vapor deposition (LPCVD) refilling.

Conclusions:

  • Optimizing the Bosch process parameters, specifically the etch cycle time, is critical for controlling trench sidewall profiles.
  • The presented method successfully enables the fabrication of keyhole-free, positively-tapered high-aspect ratio trenches.
  • This advancement is vital for enhancing the performance and reliability of MEMS devices relying on refilled trench structures.