Lateral double magnetic tunnel junction device with orthogonal polarizer for high-performance magnetoresistive memory

Magnetic tunnel junction (MTJ)-based memory devices have larger switching delay and energy consumption, compared to cache or dynamic random access memory. In order to broaden the applications of the magnetoresistive random access memory, reducing the switching time and energy consumption of the MTJ is required. Here, a novel lateral double MTJ with an orthogonal polarizer is proposed. The proposed device consists of three ferromagnetic regions: the first pinned region (PR1) with perpendicular magnetic anisotropy (PMA), a free region (FR) with PMA, and the second pinned region (PR2) with in-plane magnetic anisotropy (IMA). PR1 and PR2 are placed on top of the oxide barrier, which separates them from the FR, comprising a lateral double MTJ structure. The current pulse through PR2 helps to perturb the magnetization of the FR. Since the angle between PR2 and FR is 90°, the initial torque increases significantly, decreasing switching delay by 4.02 times and energy-delay product by 7.23 times. It is also shown, that the area of the access transistor can be reduced by approximately 10%, while maintaining the same energy-delay product and reducing gate RC delay.