Related Experiment Video
Updated: Aug 19, 2025
08:12
Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
12.4K
Half-Metallic Heusler Alloy/MoS2 Based Magnetic Tunnel Junction
Konstantin V Larionov1, Jose J Pais Pereda1, Songtian Li2
1National University of Science and Technology MISiS, 4 Leninskiy Prospect, Moscow119049, Russian Federation.
ACS Applied Materials & Interfaces
|December 2, 2022
Summary
This study explores magnetic tunnel junctions using half-metallic Co2Fe(Ge1/2Ga1/2) and MoS2 spacers. It reveals potential for high magnetoresistance in next-generation spintronic devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Vertical magnetoresistive spin valves are crucial for low-power storage and memory.
- Graphene/half-metallic Co2Fe(Ge1/2Ga1/2) (CFGG) heterostructures show promise for spintronic applications.
Purpose of the Study:
- Investigate magnetic tunnel junctions (MTJs) using ferromagnetic CFGG Heusler alloy and MoS2 spacers.
- Analyze the magnetic and transport properties of CFGG/MoS2/CFGG MTJs.
Main Methods:
- Theoretical investigation using ab initio calculations.
- Nonequilibrium Green's function formalism for ballistic transport analysis.
Main Results:
- Ferromagnetism of CFGG is maintained at the interface.
- Half-metallicity of CFGG is recovered within a few atomic layers.
- Large magnetoresistance (MR) values up to ~10^5% observed in CFGG/MoS2/CFGG MTJs.
Conclusions:
- CFGG/MoS2/CFGG MTJs demonstrate significant potential for spintronics.
- Findings support the development of spintronic devices using half-metallic Heusler alloys and transition metal dichalcogenides.
Related Concept Videos
01:24Metal-Semiconductor Junctions
431
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
431
01:27Biasing of Metal-Semiconductor Junctions
309
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
309
01:22MOSFET: Enhancement Mode
442
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
442
01:16MOSFET
542
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
In an n-MOSFET, the structure includes n-type source and drain...
542
01:28Types Of Superconductors
1.1K
A superconductor is a substance that offers zero resistance to the electric current when it drops below a critical temperature. Zero resistance is not the only interesting phenomenon as materials reach their transition temperatures. A second effect is the exclusion of magnetic fields. This is known as the Meissner effect. A light, permanent magnet placed over a superconducting sample will levitate in a stable position above the superconductor. High-speed trains that levitate on strong...
1.1K
01:17Characteristics of MOSFET
462
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
462