Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Dielectric Polarization in a Capacitor01:31

Dielectric Polarization in a Capacitor

4.9K
The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
4.9K
Potential Due to a Polarized Object01:29

Potential Due to a Polarized Object

457
A neutral atom consists of a positively charged nucleus surrounded by a negatively charged electron cloud. When placed in an external electric field, the external electric force pulls the electrons and nucleus apart, opposite to the intrinsic attraction between the nucleus and the electrons. The opposing forces balance each other with a slight shift between the center of masses of the nucleus and the electron cloud, resulting in a polarized atom. On the other hand, a few molecules, like water,...
457
Ferromagnetism01:31

Ferromagnetism

2.4K
Materials like iron, nickel, and cobalt consist of magnetic domains, within which the magnetic dipoles are arranged parallel to each other. The magnetic dipoles are rigidly aligned in the same direction within a domain by quantum mechanical coupling among the atoms. This coupling is so strong that even thermal agitation at room temperature cannot break it. The result is that each domain has a net dipole moment. However, some materials have weaker coupling, and are ferromagnetic at lower...
2.4K
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

308
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
308
Group Polarization01:01

Group Polarization

34.7K
Group polarization is the strengthening of an original group attitude following the discussion of views within a group (Teger & Pruitt, 1967). That is, if a group initially favors a viewpoint, after discussion the group consensus is likely a stronger endorsement of the viewpoint. Conversely, if the group was initially opposed to a viewpoint, group discussion would likely lead to stronger opposition.
34.7K
Biasing of P-N Junction01:16

Biasing of P-N Junction

693
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
693

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Unravelling the nanoscale mechanism of polarization reversal in a Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-based ferroelectric capacitor by vector piezoresponse force microscopy.

Nanoscale·2024
Same author

A Principal Components Analysis and Functional Annotation of Differentially Expressed Genes in Brain Regions of Gray Rats Selected for Tame or Aggressive Behavior.

International journal of molecular sciences·2024
Same author

AtSNP_TATAdb: Candidate Molecular Markers of Plant Advantages Related to Single Nucleotide Polymorphisms within Proximal Promoters of <i>Arabidopsis thaliana</i> L.

International journal of molecular sciences·2024
Same author

Giant Electromechanical Effect in Piezoelectric Nanomembranes Based on Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>.

ACS applied materials & interfaces·2023
Same author

Effect of Domain Structure and Dielectric Interlayer on Switching Speed of Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Film.

Nanomaterials (Basel, Switzerland)·2023
Same author

Wake-Up Free Ultrathin Ferroelectric Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Films.

Nanomaterials (Basel, Switzerland)·2023
Same journal

Correction: Jiang et al. Methods for Obtaining One Single Larmor Frequency, Either <i>v</i><sub>1</sub> or <i>v</i><sub>2</sub>, in the Coherent Spin Dynamics of Colloidal Quantum Dots. <i>Nanomaterials</i> 2023, <i>13</i>, 2006.

Nanomaterials (Basel, Switzerland)·2026
Same journal

Correction: Ekman et al. Synthesis, Characterization, and Adsorption Properties of Nitrogen-Doped Nanoporous Biochar: Efficient Removal of Reactive Orange 16 Dye and Colorful Effluents. <i>Nanomaterials</i> 2023, <i>13</i>, 2045.

Nanomaterials (Basel, Switzerland)·2026
Same journal

Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub>-Based Materials and Coatings for De-Icing and Defogging of Wind Turbine Blades: Materials Basis, Structural Design, Engineering Integration, and Future Opportunities.

Nanomaterials (Basel, Switzerland)·2026
Same journal

Influence of the Ripeness Stages of the Precursors on the Optical Characteristics of Carbon Dots Obtained from Valencia Orange Peels (<i>Citrus sinensis</i> L. Osbeck) by Hydrothermal Synthesis.

Nanomaterials (Basel, Switzerland)·2026
Same journal

Insights into ALD Growth of Al-Based Dielectric Stack on 4H-SiC.

Nanomaterials (Basel, Switzerland)·2026
Same journal

Metal-<i>N</i>-Heterocyclic Carbene Porous Organic Polymers as Efficient Bifunctional Water-Splitting Electrocatalysts.

Nanomaterials (Basel, Switzerland)·2026
See all related articles

Related Experiment Video

Updated: Aug 17, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.3K

Polarization Switching Kinetics in Thin Ferroelectric HZO Films.

Ekaterina Kondratyuk1, Anastasia Chouprik1

  • 1Moscow Institute of Physics and Technology, 9 Institutskiy Lane, 141700 Dolgoprudny, Russia.

Nanomaterials (Basel, Switzerland)
|December 11, 2022
PubMed
Summary
This summary is machine-generated.

Ferroelectric hafnium oxide (HfO2) thin films are key for memory devices. This study proposes a new model explaining polarization switching behavior in hafnium zirconium oxide (HZO) thin films.

Keywords:
charge injectiondepolarization fieldferroelectric hafnium oxideferroelectric memorypolarization switching kineticsswitching speed

More Related Videos

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
09:41

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

9.6K
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.7K

Related Experiment Videos

Last Updated: Aug 17, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
10:40

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy

Published on: April 8, 2018

8.3K
Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
09:41

Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides

Published on: May 29, 2018

9.6K
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.7K

Area of Science:

  • Materials Science
  • Solid State Physics
  • Electrical Engineering

Background:

  • Ferroelectric polycrystalline HfO2 thin films offer promising properties for non-volatile memory, including Si technology compatibility, scalability, low power, and high endurance.
  • Understanding polarization switching kinetics is crucial for commercializing ferroelectric memory, but the physical origin of retardation behavior at low/medium fields remains unclear.

Purpose of the Study:

  • To investigate and explain the polarization switching kinetics in Hf0.5Zr0.5O2 (HZO) based capacitors.
  • To propose and validate a new model that accounts for the observed retardation behavior in HZO switching kinetics.

Main Methods:

  • Examination of existing switching kinetics models.
  • Development of an extended statistical model incorporating depolarization fields, built-in internal fields from charge injection, and in-plane electric field inhomogeneity.
  • Experimental validation of the proposed model against HZO capacitor data.

Main Results:

  • The proposed statistical model successfully describes the polarization switching kinetics in HZO capacitors.
  • The model accurately captures the retardation behavior observed at low and medium switching fields.
  • Excellent agreement was found between the model's predictions and experimental results.

Conclusions:

  • The developed model provides a comprehensive explanation for polarization switching dynamics in Hf0.5Zr0.5O2.
  • This work advances the understanding of ferroelectric switching mechanisms, crucial for optimizing future memory devices.
  • The findings contribute to the ongoing development of HfO2-based ferroelectric memory technologies.