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Published on: April 26, 2019
Engineering Silk Protein to Modulate Polymorphic Transitions for Green Lithography Resists
Soon-Chun Chung1, Joon-Song Park1, Rakesh Kumar Jha2
1Material Research Center, Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Suwon 16678, Korea.
Abstract:
Silk protein is being increasingly introduced as a prospective material for biomedical devices. However, a limited locus to intervene in nature-oriented silk protein makes it challenging to implement on-demand functions to silk. Here, we report how polymorphic transitions are related with molecular structures of artificially synthesized silk protein and design principles to construct a green-lithographic and high-performative protein resist. The repetition number and ratio of two major building blocks in synthesized silk protein are essential to determine the size and content of β-sheet crystallites, and radicals resulting from tyrosine cleavages by the 193 nm laser irradiation induce the β-sheet to α-helix transition. Synthesized silk is designed to exclusively comprise homogeneous building blocks and exhibit high crystallization and tyrosine-richness, thus constituting an excellent basis for developing a high-performance deep-UV photoresist. Additionally, our findings can be conjugated to design an electron-beam resist governed by the different irradiation-protein interaction mechanisms. All synthesis and lithography processes are fully water-based, promising green lithography. Using the engineered silk, a nanopatterned planar color filter showing the reduced angle dependence can be obtained. Our study provides insights into the industrial scale production of silk protein with on-demand functions.

