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Non-Volatile Memory and Synaptic Characteristics of TiN/CeOx/Pt RRAM Devices

Hoesung Ha1, Juyeong Pyo1, Yunseok Lee1

  • 1Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea.

Materials (Basel, Switzerland)
|December 23, 2022
PubMed

Keywords:
cerium oxidememristorneuromorphic systemresistive switching

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