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Related Experiment Video

Updated: Aug 16, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

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Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Transistor at Different Substrate Voltages.

Yuan Lin¹, Min-Lu Kao¹, You-Chen Weng²

¹Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan.

|December 23, 2022

Summary

Investigating substrate voltage (V_SUB) in Gallium Nitride on Silicon (GaN-on-Si) high electron mobility transistors (HEMTs) reveals its impact on device performance. Applying specific V_SUB levels can enhance breakdown voltage and dynamic on-resistance by managing charge traps.

Keywords:

GaN HEMT breakdown voltage charge redistribution donor trap dynamic on-resistance substrate voltage

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Area of Science:

Materials Science
Semiconductor Physics
Electrical Engineering

Background:

Gallium Nitride on Silicon (GaN-on-Si) high electron mobility transistors (HEMTs) are crucial for power applications.
Substrate voltage (V_SUB) influences the behavior of traps within the buffer stack and their effect on 2DEG conductivity.
Understanding trap dynamics is essential for optimizing GaN-on-Si HEMT performance.

Purpose of the Study:

To investigate the effects of substrate voltage (V_SUB) on GaN-on-Si HEMTs with superlattice transition layers.
To analyze how V_SUB impacts 2DEG conductivity, buffer charge redistribution, and trap ionization.
To determine the relationship between V_SUB and key performance metrics like breakdown voltage (BV) and dynamic on-resistance (R_on).

Main Methods:

Experimental investigation of GaN-on-Si HEMTs with superlattice transition layers.
Application of varying substrate voltages (V_SUB) to the devices.
Analysis of 2-dimensional electron gas (2DEG) conductivity, charge redistribution, and trap behavior.

Main Results:

Negative V_SUB increases ionized donor and acceptor traps, enhancing breakdown voltage (BV) by improving vertical electric field distribution.
Positive V_SUB aids in refilling ionized traps, leading to a slight improvement in dynamic on-resistance (R_on) degradation.
Asymmetric electron injection into the buffer stack layer is observed, influenced by V_SUB.

Conclusions:

Substrate voltage (V_SUB) significantly modulates the electrical performance of GaN-on-Si HEMTs through field effect and buffer trapping.
Optimizing V_SUB is critical for enhancing breakdown voltage and dynamic on-resistance in power applications.
The study highlights the complex interplay between V_SUB, trap dynamics, and charge redistribution in GaN-on-Si HEMTs.