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Characteristics of leakage currents in InGaN/AlGaN nanowire-based red microLEDs
Applied Optics
|January 11, 2023
Summary
Investigating leakage current in III-nitride nanowire (NW) LEDs reveals crucial insights. Understanding temperature-dependent characteristics and activation energies is key to improving red microLED performance and reliability.
Area of Science:
- Materials Science
- Optoelectronics
- Semiconductor Physics
Background:
- III-nitride nanowire (NW) LEDs are crucial for emerging applications.
- Performance limitations, especially leakage current, hinder device reliability and efficiency.
- Leakage current significantly impacts power consumption and luminescence in NW LEDs.
Purpose of the Study:
- To experimentally investigate temperature-dependent leakage current in InGaN/AlGaN NW-based red microLEDs.
- To analyze forward and reverse current-voltage characteristics and their underlying physical mechanisms.
- To provide insights for designing and fabricating high-performance NW-based LEDs.
Main Methods:
- Experimental measurement of temperature-dependent current-voltage characteristics.
- Fitting experimental data using models incorporating space charge effects and ideality factors.
- Utilizing Arrhenius plots to determine thermal activation energies under different bias conditions.
Main Results:
- Leakage current characteristics were analyzed, with parameters showing error bars below 10%.
- An extra space charge term, attributed to trapped charges within NWs, was identified.
- Voltage-dependent activation energy was found to be approximately double for forward bias compared to reverse bias.
Conclusions:
- The study provides critical data on leakage current mechanisms in NW LEDs.
- Understanding activation energy differences under forward and reverse bias is vital for device optimization.
- Results offer valuable insights for enhancing the performance and reliability of III-nitride NW-based LEDs.
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