Thermal stability of MBE-grown InGaN/AlGaN red nanowire LEDs for extreme environment applications

In this Letter, we report on the demonstration of InGaN/AlGaN nanowire red light-emitting diodes, which exhibit high thermal robustness under extreme operating conditions. The devices emit at a wavelength of ~650 nm and maintain stable red electroluminescence over injection currents from 10 to 1000 mA. Temperature-dependent electroluminescence characterization reveals sustained emission from 25 °C to ~950 °C under ramped conditions with a minimal peak wavelength shift of ~3-5 nm and moderate spectral broadening of ~10 nm. The emission linewidth remains broad, with a full width at half maximum of ~94 nm across the entire temperature range. These results establish III-nitride nanowire LEDs as a robust platform for high-temperature red emission, with implications for optoelectronic systems operating in harsh environments, including aerospace, high-temperature industrial processes, and advanced sensing.