A non-volatile AND gate based on Al₂O₃/HfO₂/Al₂O₃ charge-trap stack for in-situ storage applications

The emergence of two-dimensional (2D) materials has inspired academia in microelectronics to find a novel device structure to offer a potential technological route for increasing energy efficiency and processing speed for data storage and computing at transistor level. Devices based on 2D materials include logic gates and memories, each with their own unique features. However, integrating logic function and memory into a single device has barely been studied. Here, we report a non-volatile AND gate based on Al₂O₃/HfO₂/Al₂O₃ charge-trap stack. The device can store charges after completing logic operation. The ratio of high and low current states during logic operations can exceed 10⁵. The output current states during the logic and memory operations still have a two orders of magnitude distinction after 800 s, indicating that this device possesses the non-volatile characteristic. The device has potential applications for in-situ memory applications, which makes it a possible candidate to break the "memory wall" at transistor level.