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Published on: December 23, 2013

Editorial for the Special Issue on Advanced Interconnect and Packaging.

Wen-Sheng Zhao¹

¹Zhejiang Provincial Key Lab of Large-Scale Integrated Circuit Design, School of Electronics and Information, Hangzhou Dianzi University, Hangzhou 310018, China.

|January 21, 2023

Summary

As complementary metal-oxide-semiconductor (CMOS) technology scales down, interconnect resistivity increases, degrading performance. This study explores advanced materials to overcome these limitations in future integrated circuits.

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Area of Science:

Materials Science
Electrical Engineering
Semiconductor Physics

Background:

Continuous downscaling of feature size in CMOS technology presents challenges.
Interconnect resistivity dramatically rises with decreasing feature size, leading to performance degradation.

Discussion:

Investigating novel materials and interconnect architectures is crucial.
Exploring alternatives to traditional copper interconnects is necessary.
Addressing the physical limitations of nanoscale interconnects is key.

Key Insights:

Downscaling CMOS technology significantly increases interconnect resistivity.
Performance degradation is a direct consequence of rising interconnect resistivity.
Advanced materials are essential for future integrated circuit performance.

Outlook:

Future research should focus on developing new interconnect materials.
Exploring alternative interconnect technologies beyond traditional copper is vital.
Overcoming interconnect bottlenecks is critical for continued semiconductor advancement.