Related Experiment Video
Updated: Aug 12, 2025

Gradient Echo Quantum Memory in Warm Atomic Vapor
Published on: November 11, 2013
Toward the Speed Limit of Phase-Change Memory
Jiabin Shen1,2, Wenxiong Song1, Kun Ren3
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China.
Elemental antimony (Sb)-based phase-change memory (PCM) exhibits superfast crystallization speeds, reaching 242 ps in 60 nm devices. This breakthrough enables dynamic random-access memory (DRAM)-like and cache-like PCM applications.
Area of Science:
- Materials Science
- Electrical Engineering
- Computer Science
Background:
- Phase-change memory (PCM) is a leading next-generation data storage technology.
- PCM programming speed has improved significantly, reaching sub-nanosecond timescales.
- Switching speed, determined by chalcogenide media recrystallization, is crucial for PCM applications.
Purpose of the Study:
- To identify materials with ultimate crystallization speeds for advanced PCM.
- To investigate the theoretical and practical limits of PCM switching speed.
Main Methods:
- Systematic analysis of phase-change materials.
- Ab initio molecular dynamics simulations.
- Experimental characterization of Sb-based PCM devices.
Main Results:
- Elemental Sb-based PCM predicted to have superfast crystallization speeds.
- Experimental crystallization speeds achieved within 360 ps.
- Record-fast crystallization speed of 242 ps demonstrated in 60 nm devices.
- Crystallization speed increases with device miniaturization.
Conclusions:
- Sb-based PCM offers ultra-fast switching capabilities.
- Miniaturization further enhances PCM speed.
- Findings pave the way for DRAM-like and cache-like PCM.
More Related Videos
Related Concept Videos
Time and frequency -Domain Interpretation of Phase-lead Control
The design of phase-lead control involves the strategic placement of poles and zeros to balance steady-state error and system...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Propagation Speed of Electromagnetic Waves
Speed of a Transverse Wave
One of the key properties of any wave is the wave speed. Light...
Phase Changes
A substance melts or freezes at a temperature called its melting point and boils or condenses at its boiling point. These temperatures depend on pressure. High pressure favors the denser form of the substance, so typically, high pressure...

