Toward the Speed Limit of Phase-Change Memory

Jiabin Shen1,2, Wenxiong Song1, Kun Ren3

  • 1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, P. R. China.

Summary

Elemental antimony (Sb)-based phase-change memory (PCM) exhibits superfast crystallization speeds, reaching 242 ps in 60 nm devices. This breakthrough enables dynamic random-access memory (DRAM)-like and cache-like PCM applications.

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