Domain-wall magnetoelectric coupling in multiferroic hexagonal YbFeO₃ films.

Area of Science:

• Condensed Matter Physics
• Materials Science
• Magnetism

Background:

• Magnetoelectric (ME) coupling in multiferroic materials offers pathways for electrical control of magnetic states.
• Domain-wall ME coupling is a key mechanism, but its enhancement requires precise control over ferroelectric (FE) domain wall populations.

Purpose of the Study:

• To investigate the domain-wall ME coupling in single-phase multiferroic h-YbFeO3 thin films.
• To explore the effect of FE domain wall density on the ME coupling and magnetization.
• To demonstrate the viability of electrical control over magnetization via domain wall engineering.

Main Methods:

• Utilized phenomenological theory simulations to model ME coupling.
• Experimentally fabricated and characterized multiferroic h-YbFeO3 thin films.
• Performed electrical polarization switching measurements to observe magnetic state changes.

Main Results:

• FE domain walls in h-YbFeO3 induce clamped antiferromagnetic (AFM) domain walls with reduced magnetization.
• Simulations predict enhanced domain-wall ME effect when FE domain wall separation decreases below AFM domain wall width.
• Experimental results show magnetization reduction at coercive voltages during ferroelectric switching.

Conclusions:

• Domain-wall ME coupling in h-YbFeO3 is significantly influenced by FE domain wall density.
• Electrical control of magnetization is achievable by manipulating FE domain wall separation.
• This work highlights the potential of domain-wall engineering for developing novel multiferroic devices.