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Updated: Aug 12, 2025

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Published on: November 30, 2012
Subwavelength structure engineered passband filter for the 2-µm wave band
Researchers developed a silicon-on-insulator passband filter for the 2-µm wave band. This compact device offers excellent performance, including high sidelobe suppression and low insertion loss, making it suitable for optical communications.
Area of Science:
- Photonics and Optical Engineering
- Materials Science
Background:
- Integrated photonics enables compact optical devices.
- Silicon-on-insulator (SOI) is a key platform for photonic integrated circuits.
- Filters are crucial components in optical communication systems.
Purpose of the Study:
- To experimentally demonstrate a novel passband filter for the 2-µm wave band.
- To achieve high performance metrics including bandwidth, sidelobe suppression, and insertion loss.
- To utilize the silicon-on-insulator platform for integrated photonic applications.
Main Methods:
- Fabrication of a device on a 340-nm-thick silicon membrane.
- Integration of a strip waveguide with an apodized subwavelength-structured waveguide.
- Experimental characterization of the passband filter's optical performance.
Main Results:
- Demonstration of a passband filter operating in the 2-µm wave band.
- Achieved a 3-dB bandwidth of 16-33 nm.
- Obtained a high sidelobe suppression ratio (SLSR) of 24 dB.
- Measured a low insertion loss (IL) of 0.4 dB.
Conclusions:
- The proposed SOI passband filter is a high-performance component for the 2-µm wave band.
- The device design and fabrication are suitable for integrated photonic applications.
- The demonstrated filter offers a promising solution for optical communication and sensing systems.
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