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Updated: Aug 9, 2025

Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
Published on: September 28, 2016
Magnetic-field-dependent spin properties of divacancy defects in silicon carbide
Fei-Fei Yan1,2, Jun-Feng Wang1,3,2, Zhen-Xuan He1,2
1CAS Key Laboratory of Quantum Information, University of Science and Technology of China, Hefei 230026, China. cfli@ustc.edu.cn.
Abstract:
In recent years, spin defects in silicon carbide have become promising platforms for quantum sensing, quantum information processing and quantum networks. It has been shown that their spin coherence times can be dramatically extended with an external axial magnetic field. However, little is known about the effect of magnetic-angle-dependent coherence time, which is an essential complement to defect spin properties. Here, we investigate the optically detected magnetic resonance (ODMR) spectra of divacancy spins in silicon carbide with a magnetic field orientation. The ODMR contrast decreases as the off-axis magnetic field strength increases. We then study the coherence times of divacancy spins in two different samples with magnetic field angles, and both of the coherence times decrease with the angle. The experiments pave the way for all-optical magnetic field sensing and quantum information processing.
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