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Surface oxygen vacancy engineering on TiO2 (101) via ALD technology for simultaneously enhancing charge separation
Wenbo Wu1, Zhenbo Peng2, Jun Wang1
1College of Material, Chemistry and Chemical Engineering, Hangzhou Normal University, Hangzhou, Zhejiang 311121, P. R. China. gjia@hznu.edu.cn.
Chemical Communications (Cambridge, England)
|February 22, 2023
Summary
Sulfur-doped titanium oxide (SOV) molecular layers were grown on titanium dioxide (TiO2) nanotubes. This significantly enhanced charge separation and transfer efficiencies for improved performance.
Area of Science:
- Materials Science
- Nanotechnology
- Surface Chemistry
Background:
- Titanium dioxide (TiO2) nanotubes are widely studied for photocatalytic and energy applications.
- Improving charge separation and transfer efficiencies in TiO2-based materials is crucial for enhancing their performance.
Purpose of the Study:
- To construct titanium oxide molecular layers with significant sulfur doping on TiO2 nanotubes.
- To investigate the impact of these modified layers on charge separation and transfer efficiencies.
Main Methods:
- Utilized a precisely controlled atomic layer deposition (ALD) technique.
- Synthesized sulfur-doped titanium oxide (SOV) molecular layers on (101) TiO2 nanotubes.
Main Results:
- Achieved extensive SOV content ranging from 11.4% to 16.2%.
- Increased charge separation efficiency to 28.2% (17 times higher than initial TiO2).
- Enhanced surface charge transfer efficiency to 89.0% (2 times higher than initial TiO2).
Conclusions:
- ALD is an effective method for creating highly efficient SOV/TiO2 nanotube heterostructures.
- Sulfur doping significantly boosts the charge dynamics of TiO2 nanotubes.
- These findings offer a pathway for developing advanced nanomaterials for energy conversion and storage.
