Interfacial Chemical Bond Engineering in a Direct Z-Scheme g-C₃N₄/MoS₂ Heterojunction

Area of Science:

• Materials Science
• Photocatalysis
• Nanotechnology

Background:

• Z-scheme heterojunctions offer superior carrier separation and photoredox properties for photocatalysis.
• Controlling charge separation at the nanoscale interface of heterostructures remains a significant challenge.

Purpose of the Study:

• To design an atomic-level interfacial bridge using a Mo-N chemical bond.
• To enhance charge carrier migration between g-C3N4 and MoS2 in a Z-scheme heterojunction.
• To improve photocatalytic efficiency for hydrogen evolution.

Main Methods:

• Fabrication of g-C3N4/MoS2 heterostructures with a designed Mo-N chemical bond.
• Utilizing experimental techniques to confirm the formation of the Mo-N bond and its role in charge transfer.
• Evaluating photocatalytic hydrogen evolution rates.

Main Results:

• The Mo-N chemical bond effectively connects the conduction band of MoS2 and the valence band of g-C3N4.
• The designed interface and internal electric field significantly promote photogenerated carrier separation.
• The optimized photocatalyst achieved a hydrogen evolution rate approximately 19.6 times higher than pristine g-C3N4.

Conclusions:

• Atomic-level interfacial chemical bond design is crucial for optimizing heterojunction photocatalysts.
• The Mo-N bond serves as an effective bridge for direct charge carrier migration.
• This study provides a novel strategy for developing efficient catalytic heterojunctions.