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Decoding the phonon transport of structural lubrication at silicon/silicon interface
Yun Dong1,2, Yusong Ding1, Zhiyuan Rui1
1School of Mechanical and Electrical Engineering, Lanzhou University of Technology, Lanzhou, 730050, People's Republic of China.
Nanotechnology
|February 23, 2023
Summary
Friction force exhibits 90°-symmetry at the Si/Si interface, independent of load and temperature. Lower interfacial thermal resistance (ITR) in commensurate contacts enhances phonon transport and energy dissipation, unlike incommensurate contacts.
Area of Science:
- Tribology
- Materials Science
- Solid-State Physics
Background:
- Phonon transport mechanisms at structural lubrication interfaces remain unclear.
- Understanding interfacial phenomena is crucial for predicting friction and wear.
Purpose of the Study:
- To elucidate the role of phonon transport in friction at the Si/Si interface.
- To investigate the relationship between interfacial thermal resistance (ITR) and friction characteristics.
Main Methods:
- Experimental investigation of friction force under varying rotational angles, normal load, and temperature.
- Analysis of interfacial temperature differences and their correlation with contact commensurability.
- Examination of phonon transport pathways and energy dissipation mechanisms.
Main Results:
- A 90°-symmetry of friction force was observed at the Si/Si interface, independent of normal load and temperature.
- Incommensurate contacts showed significantly larger interfacial temperature differences due to higher ITR.
- Lower ITR in commensurate contacts facilitated more effective phonon energy dissipation.
Conclusions:
- Phonon transport dynamics directly influence frictional energy dissipation at structural interfaces.
- Contact commensurability dictates ITR and consequently friction behavior.
- The number of excited phonons correlates with the extent of frictional energy dissipation.

