The Total Ionizing Dose Effects on Perovskite CsPbBr₃ Semiconductor Detector.

Area of Science:

• Materials Science
• Semiconductor Physics
• Radiation Detection

Background:

• Perovskite CsPbBr3 semiconductors possess unique optoelectronic properties and high defect tolerance.
• These properties make them promising for room-temperature X-ray and gamma-ray detection.

Purpose of the Study:

• To investigate the total dose effects of gamma (γ) ray irradiation on Schottky-type perovskite CsPbBr3 detectors.
• To assess the performance degradation and recovery of these detectors under prolonged radiation exposure.

Main Methods:

• Fabrication of Schottky-type perovskite CsPbBr3 detectors.
• Measurement of electrical characteristics and γ-ray response before and after 60Co γ irradiation (100 and 200 krad(Si)).
• Evaluation of device performance recovery after room-temperature annealing.

Main Results:

• Detector performance, including γ-ray response, significantly degraded with increasing total radiation dose.
• Spectral resolving ability was lost at a total dose of 200 krad(Si).
• Partial performance recovery was observed after one week of room-temperature annealing.

Conclusions:

• Total dose effects critically impact the performance of perovskite CsPbBr3 detectors.
• Radiation-induced defects are not permanent and can be mitigated via room-temperature annealing.
• This study provides insights for developing robust perovskite detectors for harsh radiation environments.