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Development of a cryogenic passive-scattering-type near-field optical microscopy system.
Kuan-Ting Lin1, Qianchun Weng1, Sunmi Kim1
1Institute of Industrial Science, The University of Tokyo, Komaba 4-6-1, Meguro-ku, Tokyo 153-8505, Japan.
The Review of Scientific Instruments
|March 1, 2023
Summary
We developed a cryogenic passive scanning near-field optical microscopy (s-SNOM) for studying infrared surface waves. This low-temperature technique enables sensitive detection of thermally excited electromagnetic fields.
Area of Science:
- Physics
- Materials Science
- Nanotechnology
Background:
- Passive scattering-type scanning near-field optical microscopy (s-SNOM) studies localized, long-wavelength infrared (LWIR) surface waves.
- External illumination is typically required for s-SNOM, limiting its application in certain low-temperature environments.
Purpose of the Study:
- To develop a cryogenic passive s-SNOM instrument for near-field detection without external illumination.
- To investigate thermally excited surface electromagnetic fields at cryogenic temperatures.
Main Methods:
- Implementation of a cryogenic passive s-SNOM instrument within a vacuum chamber with 4 K liquid-helium cooling.
- Utilizing a highly sensitive LWIR confocal optical system and a tuning fork-based atomic force microscope for near-field detection at 10.2 ± 0.9 µm.
- Investigating self-heated NiCr wire on SiO2 at 5 K.
Main Results:
- Achieved passive near-field detection with significantly reduced background thermal noise due to the cryogenic environment.
- Identified thermally excited fluctuating charges of conduction electrons as the origin of surface electromagnetic fields.
- Demonstrated the capability to study surface electromagnetic fields at extremely low temperatures.
Conclusions:
- The developed cryogenic passive s-SNOM is a powerful tool for investigating LWIR surface waves and electromagnetic fields in low-temperature environments.
- This technique offers a novel approach for studying phenomena like hot-carrier dissipation in ballistic conductors.
- The low background noise achieved at 4 K enhances the sensitivity and applicability of s-SNOM.

