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Updated: Aug 6, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Anisotropy of impact ionization in WSe2 field effect transistors
Taeho Kang1,2, Haeju Choi1,2, Jinshu Li1,2
1SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 16419, South Korea.
Abstract:
Carrier multiplication via impact ionization in two-dimensional (2D) layered materials is a very promising process for manufacturing high-performance devices because the multiplication has been reported to overcome thermodynamic conversion limits. Given that 2D layered materials exhibit highly anisotropic transport properties, understanding the directionally-dependent multiplication process is necessary for device applications. In this study, the anisotropy of carrier multiplication in the 2D layered material, WSe2, is investigated. To study the multiplication anisotropy of WSe2, both lateral and vertical WSe2 field effect transistors (FETs) are fabricated and their electrical and transport properties are investigated. We find that the multiplication anisotropy is much bigger than the transport anisotropy, i.e., the critical electric field (ECR) for impact ionization of vertical WSe2 FETs is approximately ten times higher than that of lateral FETs. To understand the experimental results we calculate the average energy of the carriers in the proposed devices under strong electric fields by using the Monte Carlo simulation method. The calculated average energy is strongly dependent on the transport directions and we find that the critical electric field for impact ionization in vertical devices is approximately one order of magnitude larger than that of the lateral devices, consistent with experimental results. Our findings provide new strategies for the future development of low-power electric and photoelectric devices.
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