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Self-Curable Synaptic Ferroelectric FET Arrays for Neuromorphic Convolutional Neural Network.
Wonjun Shin1, Jiyong Im2, Ryun-Han Koo1
1Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.
Researchers developed a reliable ferroelectric field-effect-transistor (FeFET) synaptic array for neuromorphic computing. An innovative self-curing method significantly enhances device endurance, advancing artificial synapse technology.
Area of Science:
- Materials Science
- Computer Engineering
- Neuroscience
Background:
- Deep learning advancements drive interest in neuromorphic computing, mimicking the human brain.
- Energy-efficient and reliable artificial synapses are crucial for neuromorphic systems.
Purpose of the Study:
- To fabricate and demonstrate a synaptic ferroelectric field-effect-transistor (FeFET) array for neuromorphic convolutional neural networks.
- To develop and validate an efficient self-curing method to enhance FeFET array endurance.
Main Methods:
- Fabrication of a synaptic FeFET array.
- Demonstration of synaptic weight potentiation/depression and program-inhibiting operations at the array level.
- Implementation of a self-curing method utilizing punch-through current and low-frequency noise spectroscopy for evaluation.
Main Results:
- Achieved array-level long-term potentiation and depression of synaptic weights.
- Demonstrated successful program-inhibiting operations with 79.84% learning accuracy on the CIFAR-10 dataset.
- Improved FeFET array endurance by tenfold using the proposed self-curing method.
Conclusions:
- The study provides a viable method for fabricating and operating reliable synaptic FeFET arrays.
- The developed self-curing technique significantly enhances device endurance, crucial for practical neuromorphic applications.
- This work facilitates the advancement of ferroelectric-based neuromorphic computing.
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