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Insight into the intrinsic microstructures of polycrystalline SnSe based compounds
Wenhua Xue1,2, Shan Li1, Huolun He1
1School of Materials Science and Engineering, and Institute of Materials Genome & Big Data, Harbin Institute of Technology, Shenzhen 518055, People's Republic of China.
Microstructural analysis of tin selenide (SnSe) reveals lath-like grains, dislocations, and stacking faults. These features scatter phonons, contributing to the ultra-low thermal conductivity in SnSe-based thermoelectric materials.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Tin selenide (SnSe) compounds exhibit remarkable thermoelectric properties, largely attributed to their ultra-low lattice thermal conductivity.
- Strong phonon anharmonicity is a primary factor, but microstructural contributions are also significant.
Purpose of the Study:
- To investigate the microstructures of undoped SnSe and Bi-doped SnSe using transmission electron microscopy.
- To elucidate the role of microstructural features in reducing lattice thermal conductivity in SnSe-based materials.
Main Methods:
- Transmission electron microscopy (TEM) was employed to examine the microstructures.
- Analysis focused on grain morphology, grain boundaries, dislocations, and stacking faults.
Main Results:
- A characteristic microstructure of lath-like grains was observed in SnSe-based compounds.
- A high density of low-angle grain boundaries, edge dislocations, and stacking faults was identified within the grains.
- These defects induce lattice mismatch and distortion, serving as effective phonon scattering centers.
Conclusions:
- The observed microstructures, including lath-like grains and various defects, significantly contribute to the phonon scattering and thus the low thermal conductivity of SnSe.
- This work deepens the understanding of the mechanisms behind the excellent thermoelectric performance of SnSe-based compounds.
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