Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET01:16

MOSFET

528
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
528
MOS Capacitor01:25

MOS Capacitor

884
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
884
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

417
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
417
Characteristics of MOSFET01:17

Characteristics of MOSFET

445
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
445
MOSFET Amplifiers01:17

MOSFET Amplifiers

195
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
195
Schottky Barrier Diode01:27

Schottky Barrier Diode

415
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
415

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Early detection of severe fetal growth restriction using multimodal deep learning based on ultrasound and prenatal biomarkers.

Annals of medicine·2026
Same author

Interpretable machine learning models for pre- and postoperative prediction of early intra-abdominal infections after liver transplantation: a multicenter retrospective cohort study.

Therapeutic advances in infectious disease·2026
Same author

Quantitative mechanism separation of single-event transients in nanosheet transistors via TCAD simulation.

Nanotechnology·2026
Same author

A Novel Insight into the Interplay between Serum Uric Acid and Blood Parameters: Unveiling a Complex Relationship.

Clinical laboratory·2026
Same author

Simulation study of layer-to-layer NBTI degradation non-uniformity in GAA multi-channel nanosheet FETs.

Nanotechnology·2026
Same author

Low-leakage volatile threshold switching in Gr/CIPS/h-BN/Au van der Waals heterostructure via atomic-scale geometric confinement.

Nanotechnology·2026

Related Experiment Video

Updated: Aug 5, 2025

Autonomous and Rechargeable Microneurostimulator Endoscopically Implantable into the Submucosa
08:17

Autonomous and Rechargeable Microneurostimulator Endoscopically Implantable into the Submucosa

Published on: September 27, 2018

8.5K

MOSs-String-Triggered Silicon-Controlled Rectifier (MTSCR) ESD Protection Device for 1.8 V Application.

Ruibo Chen1, Hao Wei1, Hongxia Liu1

  • 1Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China.

Micromachines
|March 29, 2023
PubMed
Summary

A novel Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Silicon-Controlled Rectifier (SCR) offers robust electrostatic discharge (ESD) protection for low-voltage integrated circuits. This new design achieves comparable low trigger voltage with significantly reduced chip area.

Keywords:
ESD protectionNMOSsilicon-controlled rectifier (SCR)trigger voltage

More Related Videos

Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics
04:09

Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics

Published on: August 30, 2024

398
Using Laser Scanning Microscopy to Determine Electromigration in Molybdenum Disilicide
09:41

Using Laser Scanning Microscopy to Determine Electromigration in Molybdenum Disilicide

Published on: May 23, 2025

145

Related Experiment Videos

Last Updated: Aug 5, 2025

Autonomous and Rechargeable Microneurostimulator Endoscopically Implantable into the Submucosa
08:17

Autonomous and Rechargeable Microneurostimulator Endoscopically Implantable into the Submucosa

Published on: September 27, 2018

8.5K
Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics
04:09

Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics

Published on: August 30, 2024

398
Using Laser Scanning Microscopy to Determine Electromigration in Molybdenum Disilicide
09:41

Using Laser Scanning Microscopy to Determine Electromigration in Molybdenum Disilicide

Published on: May 23, 2025

145

Area of Science:

  • Electrical Engineering
  • Semiconductor Device Physics
  • Integrated Circuit Design

Background:

  • Low-voltage integrated circuits require effective electrostatic discharge (ESD) protection to prevent damage.
  • Existing ESD protection components, such as diodes-string-triggered SCR (DTSCR), face challenges in balancing performance and area.
  • The need for compact and efficient ESD solutions is critical in modern CMOS technologies.

Purpose of the Study:

  • To introduce and characterize a new low voltage-triggered Silicon-Controlled Rectifier (SCR) named MTSCR.
  • To evaluate the MTSCR's performance, particularly its trigger voltage and holding voltage.
  • To compare the MTSCR with existing ESD protection components in terms of efficiency and area.

Main Methods:

  • Fabrication of the MTSCR using a standard 65 nm CMOS process.
  • Implementation of an external NMOS string to drive the internal NMOS (INMOS) and subsequently the SCR structure.
  • Characterization using Transmission Line Pulsing (TLP) measurements to assess electrical parameters.

Main Results:

  • The MTSCR achieves a low trigger voltage (Vt1) of approximately 5.03 V.
  • The MTSCR demonstrates a holding voltage (Vh) above 2.42 V.
  • A significant area reduction of approximately 44.3% compared to the DTSCR was achieved while maintaining similar low Vt1 characteristics.

Conclusions:

  • The MTSCR provides an effective low voltage-triggered ESD protection solution for integrated circuits.
  • Its superior area efficiency makes it highly suitable for 1.8 V input/output (I/O) ports in CMOS technologies.
  • The MTSCR offers a promising alternative for next-generation low-voltage ESD protection designs.