Related Experiment Video
Updated: Aug 5, 2025
11:13
Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
9.5K
Design and Analysis of Gallium Arsenide-Based Nanowire Using Coupled Non-Equilibrium Green Function for RF Hybrid
Pattunnarajam Paramasivam1, Naveenbalaji Gowthaman2, Viranjay M Srivastava2
1Electronics and Communication Engineering, Prince Shri Venkateshwara Padmavathy Engineering College, Chennai 600127, India.
Nanomaterials (Basel, Switzerland)
|March 29, 2023
Summary
This study analyzes Silicon and Gallium Arsenide nanowires using tight-binding models. Gate-All-Around Silicon nanowires demonstrate superior performance with high ON/OFF ratios and low leakage currents for future electronics.
Area of Science:
- Computational Condensed Matter Physics
- Nanotechnology
- Materials Science
Background:
- Advanced semiconductor devices require novel materials and structures.
- Nanowires (NWs) offer unique electronic properties for next-generation electronics.
- Group IV (Si) and III-V (GaAs) materials are key in semiconductor research.
Purpose of the Study:
- To design and analyze structural and electrical properties of Si and GaAs nanowires.
- To investigate the impact of Lanthanum Oxide (La2O3) shielding and z [001] orientation.
- To compare the performance of Gate-All-Around (GAA) Silicon Nanowires (NWs) with Gallium Arsenide NWs.
Main Methods:
- Utilized sp3d5s* tight-binding models for structural analysis.
- Employed the Non-Equilibrium Green Function (NEGF) method for electrical characteristic analysis.
- Simulated multi-gate nanowires with specific doping profiles, dimensions, and La2O3 dielectric layers.
Main Results:
- Gate-All-Around Silicon NWs exhibited a high ON/OFF ratio (1.06 × 10^9) and low OFF current (3.84 × 10^-14 A).
- Determined mid-channel conduction band energy (-0.309 eV) and carrier density (6.24 × 10^23 C/cm^3) at Vg=Vd=0.5 V.
- Hydrostatic strain improved electrostatic integrity and mobility in nanowires, showing potential for advanced technological nodes.
Conclusions:
- GAA Silicon NWs are superior to GaAs NWs for electronic applications due to better performance metrics.
- Hydrostatic strain is a viable method to enhance nanowire properties for future devices.
- The study provides insights into designing efficient nanowire-based electronic components.
Related Concept Videos
01:27Biasing of Metal-Semiconductor Junctions
290
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
290
01:22Carrier Generation and Recombination
659
Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
659
01:23Small-Signal Analysis of MOSFET Amplifiers
635
In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
635
01:22MOSFET: Enhancement Mode
417
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
417