Variability: Analysis
Equivalent Resistance
Coefficient of Variation
Equivalent Capacitance
Standard Deviation of Calculated Results
Variation
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Christian Acal1, David Maldonado2, Ana M Aguilera1
1Departamento de Estadística e Investigación Operativa e Instituto de Matemáticas (IMAG), Universidad de Granada, Facultad de Ciencias, Avd. Fuentenueva s/n, 18071 Granada, Spain.
This study introduces a new method to measure resistive switching memory variability by analyzing entire current-voltage curves, not just data points. This provides a more comprehensive understanding of device performance.
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