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High-Throughput Area-Selective Spatial Atomic Layer Deposition of SiO2 with Interleaved Small Molecule Inhibitors and
Bora Karasulu1, Fred Roozeboom2, Alfredo Mameli3
1Department of Chemistry, University of Warwick, Gibbet Hill Road, Coventry, CV4 7AL, UK.
Advanced Materials (Deerfield Beach, Fla.)
|April 12, 2023
Summary
A novel area-selective deposition process for silicon dioxide (SiO2) was developed using small molecule inhibitors (SMIs) and back-etch steps. This method achieves high selectivity and throughput for precise SiO2 film growth on various surfaces.
Area of Science:
- Materials Science
- Nanotechnology
- Surface Chemistry
Background:
- Area-selective deposition is crucial for advanced microelectronic fabrication.
- Existing methods often lack the required precision and throughput.
- Atomic Layer Deposition (ALD) offers potential but requires precise control for selectivity.
Purpose of the Study:
- To develop a novel area-selective deposition process for silicon dioxide (SiO2).
- To investigate the role of small molecule inhibitors (SMIs) and back-etch steps in achieving selectivity.
- To explore the broader applicability of this technique on different substrates.
Main Methods:
- Utilized a spatial atomic layer deposition (ALD) tool.
- Integrated film deposition with interleaved exposures to small molecule inhibitors (SMIs).
- Incorporated back-etch correction steps within the same ALD cycle.
- Employed X-ray photoelectron spectroscopy (XPS) and low-energy ion scattering spectroscopy (LEIS) for selectivity verification.
- Conducted Density Functional Theory (DFT) calculations to understand SMI interactions.
Main Results:
- Achieved selective SiO2 deposition up to ~23 nm with high selectivity and throughput.
- Demonstrated distinct SiO2 growth areas and zinc oxide (ZnO) non-growth areas.
- Compared the efficacy of ethylbutyric acid and pivalic acid as SMIs.
- DFT calculations indicated thermodynamic control and higher packing density of trimethylacetic acid contribute to better selectivity.
- Showcased broader applicability of carboxylic acid inhibitors on Ta2O5 and ZrO2 surfaces.
Conclusions:
- The developed process enables highly selective SiO2 deposition through the synergy of SMIs and back-etch steps.
- SMI properties like size, geometry, and packing density are critical for effective selectivity.
- Interleaved back-etch steps are essential for optimizing deposition processes.
- This work paves the way for more advanced strategies in selective deposition for microelectronics.
