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Related Concept Videos

Biasing of FET01:22

Biasing of FET

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Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
333

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A Fully Differential Analog Front-End for Signal Processing from EMG Sensor in 28 nm FDSOI Technology.

Vilem Kledrowetz1, Roman Prokop1, Lukas Fujcik1

  • 1Department of Microelectronics, Brno University of Technology, Technicka 3058/10, 61600 Brno, Czech Republic.

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Summary

This study introduces a novel low-voltage analog front-end for electromyography (EMG) signal processing. The design achieves high performance using advanced 28 nm FDSOI technology, enabling efficient wearable sensor applications.

Keywords:
active ground circuitcommon-mode rejection ratio (CMRR)driven-right-leg circuitelectromyography (EMG)fully depleted silicon on insulator (FDSOI)fully differential difference amplifier (FDDA)

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Area of Science:

  • Electronics Engineering
  • Biomedical Engineering
  • Integrated Circuit Design

Background:

  • Electromyography (EMG) signal processing requires specialized analog front-ends.
  • Low supply voltage operation is crucial for portable and wearable biomedical devices.
  • Achieving high performance at low voltages presents significant design challenges.

Purpose of the Study:

  • To present a novel analog front-end (AFE) for EMG sensor signal processing.
  • To demonstrate the feasibility of a 1 V ultra-low supply voltage design.
  • To leverage 28 nm fully depleted silicon on insulator (FDSOI) technology for enhanced performance.

Main Methods:

  • Implementation of an active ground circuit to minimize interference and stabilize common-mode voltage.
  • Design of a fully differential input instrumentation amplifier (INA) and programmable-gain amplifier (PGA).
  • Utilizing 28 nm FDSOI technology for circuit realization.
  • Performance analysis through corner and Monte Carlo simulations with 500 samples for process variations.

Main Results:

  • Achieved a high common-mode rejection ratio (CMRR) of 105.5 dB.
  • Obtained a very high input impedance of 11 GΩ.
  • The circuit occupies a small chip area of 0.09 mm².
  • Demonstrated robust performance under global and local process variations.

Conclusions:

  • The proposed analog front-end effectively processes EMG signals at an ultra-low 1 V supply.
  • The 28 nm FDSOI technology is suitable for developing high-performance, low-power analog circuits.
  • The design offers a promising solution for miniaturized and efficient EMG acquisition systems.