Related Experiment Video
Updated: Aug 2, 2025

07:57
Author Spotlight: A Rapid, Microwave-Assisted Hydrothermal Synthesis Of Nickel Hydroxide Nanosheets
Published on: August 18, 2023
1.9K
Metal-insulator transition in composition-tuned nickel oxide films
Jennifer Fowlie1, Alexandru B Georgescu2, Andreas Suter3
1Department of Applied Physics, Stanford University, Stanford, CA, United States of America.
Summary
Researchers observed a discontinuous insulator-metal transition in Nd1-xLaxNiO3 thin films at low temperatures. This transition, linked to magnetic moments, occurs without significant global structural changes, as confirmed by DFT calculations.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Solid-State Chemistry
Background:
- Solid solutions of Nd1-xLaxNiO3 exhibit intriguing electronic and magnetic properties.
- Understanding phase transitions in these materials is crucial for their technological applications.
Purpose of the Study:
- To investigate the 0 K phase transitions in Nd1-xLaxNiO3 thin films.
- To correlate structural, electronic, and magnetic properties with composition (x).
Main Methods:
- Thin film growth of Nd1-xLaxNiO3.
- Experimental characterization: Raman spectroscopy, scanning transmission electron microscopy, muon spin rotation (µSR).
- Theoretical calculations: Density Functional Theory (DFT) and DFT combined with Dynamical Mean Field Theory (DMFT).
Main Results:
- A discontinuous insulator-metal transition was observed at low temperature for x = 0.2.
- This transition was not accompanied by a discontinuous global structural change.
- DFT and DFT+DMFT calculations predicted a 0 K first-order transition around this composition.
- µSR measurements indicated non-static magnetic moments, potentially related to phase coexistence.
Conclusions:
- The study reveals a first-order insulator-metal transition in Nd1-xLaxNiO3 thin films at a specific composition.
- Theoretical calculations support the experimental findings of a 0 K transition and suggest phase coexistence.
- The observed magnetic moments are consistent with the first-order nature of the transition and phase coexistence.
Related Concept Videos
Metal-Semiconductor Junctions
401
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
401
Properties of Transition Metals
26.5K
Transition metals are defined as those elements that have partially filled d orbitals. As shown in Figure 1, the d-block elements in groups 3–12 are transition elements. The f-block elements, also called inner transition metals (the lanthanides and actinides), also meet this criterion because the d orbital is partially occupied before the f orbitals.
26.5K

