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Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor.
Zhongyunshen Zhu1, Anton E O Persson2, Lars-Erik Wernersson3
1Department of Electrical and Information Technology, Lund University, 221 00, Lund, Sweden. zhongyunshen.zhu@eit.lth.se.
Nature Communications
|May 3, 2023
Summary
We developed a novel ferroelectric tunnel field-effect transistor (ferro-TFET) for reconfigurable analog signal modulation. This device offers diverse functionalities like frequency doubling and mixing with reduced harmonic distortion.
Area of Science:
- * Solid-state physics
- * Nanoelectronics
- * Materials science
Background:
- * Reconfigurable transistors offer advanced functionalities and reduced circuit complexity.
- * Current research predominantly focuses on digital applications, leaving analog applications underexplored.
- * Novel device architectures are needed for versatile analog signal processing.
Purpose of the Study:
- * To demonstrate a single vertical nanowire ferroelectric tunnel field-effect transistor (ferro-TFET) for reconfigurable analog applications.
- * To explore diverse signal modulation modes including transmission, phase shift, frequency doubling, and mixing.
- * To achieve significant suppression of undesired harmonics in analog signal modulation.
Main Methods:
- * Fabricated a vertical nanowire ferroelectric tunnel field-effect transistor (ferro-TFET).
- * Employed a heterostructure design with a gate/source overlapped channel.
- * Utilized a ferroelectric gate oxide for non-volatile reconfigurability.
Main Results:
- * Achieved diverse signal modulation modes: transmission, phase shift, frequency doubling, and mixing.
- * Demonstrated robust negative transconductance and nearly perfect parabolic transfer characteristics.
- * Showcased non-volatile reconfigurability via the ferroelectric gate oxide.
- * Achieved significant suppression of undesired harmonics.
Conclusions:
- * The ferro-TFET enables versatile analog signal modulation with reconfigurability, reduced footprint, and low supply voltage.
- * This technology paves the way for monolithic integration of steep-slope TFETs and reconfigurable ferro-TFETs.
- * Potential for high-density, energy-efficient, and multifunctional digital/analog hybrid circuits.
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