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High-Performance Sliding Ferroelectric Transistor Based on Schottky Barrier Tuning
Renji Bian1,2, Guiming Cao3, Er Pan1
1School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China.
Nano Letters
|May 8, 2023
Summary
Researchers enhanced sliding ferroelectric transistors using γ-InSe by regulating the Schottky barrier. This achieved a high on/off ratio and wide memory window, advancing ferroelectric device miniaturization.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Sliding ferroelectricity offers potential for miniaturized ferroelectric devices.
- Current sliding ferroelectric transistors suffer from weak polarization, leading to poor performance (low on/off ratio, narrow memory window).
Purpose of the Study:
- To improve the performance of sliding ferroelectric transistors.
- To overcome limitations of weak polarization in emerging ferroelectric materials.
Main Methods:
- Developed a facile strategy to regulate the Schottky barrier in sliding ferroelectric semiconductor transistors.
- Utilized γ-InSe as the base material for the transistors.
Main Results:
- Achieved high performance with a large on/off ratio (10^6).
- Obtained a wide memory window of 4.5 V.
- Demonstrated further modulation of the memory window via electrostatic doping and light excitation.
Conclusions:
- The developed strategy significantly enhances the performance of sliding ferroelectric transistors.
- This work opens new avenues for designing advanced ferroelectric devices utilizing emerging sliding ferroelectricity.
Keywords:
electron dopinghigh on/off ratiosliding ferroelectric semiconductortunable Schottky barrierMore Related Videos
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