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    The Mandel Q parameter characterizes single photon emission from hexagonal boron nitride (hBN) quantum emitters. It reveals photon antibunching and super-Poissonian statistics, offering insights beyond the g2(τ) function for hBN single photon sources.

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    Area of Science:

    • Quantum Optics
    • Materials Science
    • Solid-State Physics

    Background:

    • Single photon sources are crucial for quantum technologies.
    • Hexagonal boron nitride (hBN) has emerged as a promising material for quantum emitters.
    • Characterizing single photon emission properties is essential for device development.

    Purpose of the Study:

    • To characterize single photon emission from hBN quantum emitters using the time-dependent Mandel Q parameter, Q(T).
    • To investigate the influence of integration time on photon statistics.
    • To explore the utility of Q(T) for assessing the intensity stability of hBN single photon sources.

    Main Methods:

    • Measurement of the time-dependent Mandel Q parameter, Q(T), for hBN quantum emitters under pulsed excitation.
    • Analysis of photon statistics at various integration times.
    • Comparison with Monte Carlo simulations of a three-level emitter model.

    Main Results:

    • A negative Q parameter was observed at short integration times (100 ns), indicating photon antibunching.
    • At longer integration times, Q became positive, signifying super-Poissonian photon statistics.
    • The observed super-Poissonian behavior was consistent with the presence of a metastable shelving state.

    Conclusions:

    • The Mandel Q parameter, Q(T), effectively characterizes single photon emission from hBN.
    • Q(T) provides complementary information to the g2(τ) function, particularly regarding intensity stability.
    • Q(T) is a valuable tool for evaluating hBN single photon sources for technological applications.