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Updated: Jul 4, 2026

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Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

You-Chen Weng1, Ming-Yao Hsiao1, Chun-Hsiung Lin2,3

  • 1College of Photonics, National Yang Ming Chiao Tung University, Tainan 71150, Taiwan.

Materials (Basel, Switzerland)
|May 13, 2023
PubMed

Keywords:
AlGaN/GaN HEMThigh pressurenucleation layer

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