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Radiation Resilient Two-Dimensional Electronics.

Thomas F Schranghamer1, Andrew Pannone1, Harikrishnan Ravichandran1

  • 1Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania 16802, United States.

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|May 26, 2023
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Summary
This summary is machine-generated.

Edge devices using molybdenum disulfide (MoS2) show resilience to high-dose gamma radiation. This research demonstrates MoS2 memtransistors maintain sensing and memory functions, crucial for defense and space applications.

Keywords:
MoS2all-in-one integrationgamma radiationlogic gatesmemtransistorsradiation hardnesstransition metal dichalcogenides (TMDCs)two-dimensional (2D) materials

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Radiation Effects

Background:

  • Edge computing requires robust, self-sufficient devices for defense and space.
  • Molybdenum disulfide (MoS2) shows promise for integrated sensing, computing, and storage.
  • Extreme environments necessitate radiation-hardened electronic components.

Purpose of the Study:

  • To investigate the effects of high-dose gamma radiation on MoS2-based memtransistors.
  • To assess the impact of gamma radiation on the sensing and memory capabilities of MoS2 devices.
  • To evaluate gamma radiation effects on MoS2 logic gates.

Main Methods:

  • Fabrication of monolayer MoS2 memtransistors and logic gates.
  • Statistical analysis of device characteristics before and after 1 Mrad gamma irradiation.
  • Grouped assessment of baseline performance, sensing, and memory functions post-irradiation.

Main Results:

  • MoS2 memtransistors retained sensing and memory functionalities after high-dose gamma irradiation.
  • Gamma irradiation did not severely impact the multiple functions of MoS2 memtransistors.
  • MoS2 logic gates also demonstrated resilience to gamma radiation exposure.

Conclusions:

  • Monolayer MoS2 memtransistors exhibit inherent radiation hardness suitable for edge computing in harsh environments.
  • MoS2 is a promising material for developing radiation-tolerant, all-in-one edge devices.
  • Further research can build upon these findings for application-specific designs.