Related Experiment Video

Updated: Jul 29, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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A New Analytical Large-Signal Model for Quasi-Ballistic Transport in InGaAs HEMTs Accommodating Dislocation

Jinye Wang1, Jun Liu1, Jie Wang1

  • 1Zhejiang Key Laboratory of Large-Scale Integrated Circuit Design, Hangzhou Dianzi University, Hangzhou 310018, China.

Micromachines
|May 27, 2023
PubMed

Keywords:
InGaAs HEMTdislocation scatteringlarge-signal modelone-fluxquasi-ballistic transporttransmission coefficient

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