Related Experiment Video
Updated: Jul 29, 2025
06:26
Novel and Innovative Hybrid Technique for Type A Aortic Dissection
Published on: March 28, 2025
399
Distal Stent Graft-Induced New Entry After Frozen Elephant Trunk Procedure for Aortic Dissection
Toshifumi Hiraoka1, Tomokuni Furukawa2, Katsuhiko Imai1
1Department of Cardiovascular Surgery, National Hospital Organization Kure Medical Center and Chugoku Cancer Center, Kure City, Hiroshima, Japan.
Annals of Vascular Surgery
|May 27, 2023
Summary
Distal stent graft-induced new entry (dSINE) is a common complication after the frozen elephant trunk (FET) procedure for aortic dissection. Cranial movement of the FET
Area of Science:
- Cardiovascular Surgery
- Thoracic Aortic Surgery
- Endovascular Repair
Background:
- Aortic dissection (AD) poses significant risks, necessitating advanced surgical interventions.
- The frozen elephant trunk (FET) procedure is a key technique for aortic arch repair in AD.
- Complications such as distal stent graft-induced new entry (dSINE) require thorough investigation.
Purpose of the Study:
- To identify risk factors associated with dSINE following FET procedures.
- To explore preventative strategies for dSINE in aortic dissection patients.
- To analyze the incidence and impact of dSINE after FET repair.
Main Methods:
- Retrospective review of 52 patients undergoing FET repair for AD (2014-2020).
- Comparison of baseline and aortic characteristics between patients with and without dSINE.
- Multidetector computed tomography analysis of device unfolding and distal edge movement.
Main Results:
- dSINE occurred in 23% of patients, representing the most frequent complication.
- Patients with dSINE often required secondary interventions (11 of 12).
- Chronic AD, residual false lumen area, and cranial distal edge movement were significantly associated with dSINE.
Conclusions:
- The distal edge of the FET device exhibits cranial movement, a likely cause of dSINE.
- Understanding these factors is crucial for mitigating dSINE risk.
- Further strategies are needed to prevent FET device migration and subsequent complications.
