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Updated: Jul 27, 2025

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
Published on: April 1, 2020
Integrated quantum optical phase sensor in thin film lithium niobate
Hubert S Stokowski1, Timothy P McKenna2, Taewon Park1,3
1Department of Applied Physics and Ginzton Laboratory, Stanford University, Stanford, CA, 94305, USA.
Abstract:
The quantum noise of light, attributed to the random arrival time of photons from a coherent light source, fundamentally limits optical phase sensors. An engineered source of squeezed states suppresses this noise and allows phase detection sensitivity beyond the quantum noise limit (QNL). We need ways to use quantum light within deployable quantum sensors. Here we present a photonic integrated circuit in thin-film lithium niobate that meets these requirements. We use the second-order nonlinearity to produce a squeezed state at the same frequency as the pump light and realize circuit control and sensing with electro-optics. Using 26.2 milliwatts of optical power, we measure (2.7 ± 0.2)% squeezing and apply it to increase the signal-to-noise ratio of phase measurement. We anticipate that photonic systems like this, which operate with low power and integrate all of the needed functionality on a single die, will open new opportunities for quantum optical sensing.

