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Updated: Jul 27, 2025

Micro/Nano-scale Strain Distribution Measurement from Sampling Moiré Fringes
Published on: May 23, 2017
3D Strain Measurement of Heterostructures Using the Scanning Transmission Electron Microscopy Moiré Depth Sectioning
Huihui Wen1,2, Hongye Zhang2,3, Runlai Peng3
1School of Electrical Engineering, Hebei University of Science and Technology, Shijiazhuang, 050018, China.
This study introduces a scanning transmission electron microscopy (STEM) moiré depth sectioning method for nanoscale 3D strain field evaluation. The technique accurately measures strain fields in heterostructures and dislocations, enhancing material reliability assessments.
Area of Science:
- Materials Science
- Nanotechnology
- Electron Microscopy
Background:
- Mechanical properties of micro/nanoscale materials are crucial for device reliability.
- Accurate 3D strain field evaluation at the nanoscale is essential but challenging.
Purpose of the Study:
- To develop a novel method for nanoscale 3D strain field measurement.
- To enable accurate strain analysis in micro/nanostructures and microdevices.
Main Methods:
- Proposed a scanning transmission electron microscopy (STEM) moiré depth sectioning method.
- Optimized electron probe scanning parameters at different material depths.
- Acquired sequential STEM moiré fringes (STEM-MFs) over a large field of view (hundreds of nanometers).
Main Results:
- Successfully constructed 3D STEM moiré information.
- Achieved multi-scale 3D strain field measurements from nanometer to submicrometer scales.
- Accurately measured the 3D strain field near heterostructure interfaces and single dislocations.
Conclusions:
- The developed STEM moiré depth sectioning method provides accurate nanoscale 3D strain field measurements.
- This technique enhances the understanding and reliability of micro/nanoscale materials and devices.
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